Simulation and Optimisation of SiGe MOSFETs

This research project is concerned with the development of methodology for simulating advanced SiGe MOSFETs using commercial simulators, the calibration of simulators against higher level Monte Carlo simulation results and real device measurements, and the application of simulation tools in the design of next generation p- channel devices. The methodology for the modelling and simulation of SiGe MOSFET devices is outlined. There are many simulation approaches widely used to simulate SiGe devices, such as Monte Carlo, hydrodynamic, energy transport, and drift diffusion. Different numerical techniques including finite difference, finite box and finite element methods, may be used in the simulators. The Si0.8Ge0.2 p-MOSFETs fabricated especially for high-field transport studies and the Si0.64Ge0.36 p-channel MOSFETs fabricated at Warwick and Southampton Universities with a CMOS compatible process in varying gate lengths were calibrated and investigated. Enhanced low field mobility in SiGe layers compared to Si control devices was observed. The results indicated that the potential of velocity overshoot effects for SiGe p-MOSFETs was considerably higher than Si counterparts, promising higher performance in the former at equal gate lengths at ultra-small devices. The effects of punchthrough stopper, undoped buffers and delta doping for SiGe p-MOSFETs were analysed systematically. It was found that the threshold voltage roll off might be reduced considerably by using an appropriate punchthrough stopper. In order to adjust the threshold voltage for digital CMOS applications, p-type delta doping was required for n+-polysilicon gate p-MOSFET. The use of delta doping made the threshold voltage roll off a more serious issue, therefore delta doping should be used with caution. The two-dimensional process simulator TSUPREM-4 and the two-dimensional device simulator MEDICI were employed to optimise and design Si/SiGe hybrid CMOS. The output of TSUPREM-4 was transferred automatically to the MEDICI device simulator. This made the simulation results more realistic. For devices at small gate length, lightly doped drain (LDD) structures were required. They would decrease the lateral subdiffusion and allow threshold voltage roll off to be minimised. These structures, however, would generally reduce drain current due to an increase in the series resistance of the drain region. Further consideration must be made of these trade-offs. Comparison between drift diffusion and hydrodynamic simulation results for SiGe p-MOSFETs were presented for the first time, with transport parameters extracted from our in-house full-band hole Monte Carlo transport simulator. It was shown that while drift diffusion and hydrodynamic simulations provided a reasonable estimation of the I-V characteristics for Si devices, the same could not be said for aggressively scaled SiGe devices. The resulting high fields at the source end of the devices meant that nonequilibrium transport effects were significant. Therefore for holes, models based on an isotropic carrier temperature were no longer appropriate, as it was shown by analysing the tensor components of the carrier temperature obtained from Monte Carlo simulation. Two-dimensional drift diffusion and Monte Carlo simulations of well-tempered Si p-MOSFETs with gate lengths of 25 and 50 nm were performed. By comparing Monte Carlo simulations with carefully calibrated drift diffusion results, it was found that nonequilibrium transport was important for understanding the high current device characteristics in sub 0.1 mum p-MOSFETs. The well-tempered devices showed better characteristics than the conventional SiGe devices. Both threshold voltage roll off and the subthreshold slope were acceptable although the effective channel length of this device was reduced from 50 nm to 25 nm. In order to adjust the threshold voltage for the digital CMOS applications, p-type delta doping was used for 50 nm well-tempered SiGe p- MOSFETs. As the delta doping made the threshold voltage roll off too serious, it was not suitable for 25 nm well-tempered SiGe p-MOSFETs

MiR-34a-5p promotes the multi-drug resistance of osteosarcoma by targeting the CD117 gene.

An association has been reported between miR-34a-5p and several types of cancer. Specifically, in this study, using systematic observations of multi-drug sensitive (G-292 and MG63.2) and resistant (SJSA-1 and MNNG/HOS) osteosarcoma (OS) cell lines, we showed that miR-34a-5p promotes the multi-drug resistance of OS through the receptor tyrosine kinase CD117, a direct target of miR-34a-5p. Consistently, the siRNA-mediated repression of CD117 in G-292 and MG63.2 cells led to a similar phenotype that exhibited all of the miR-34a-5p mimic-triggered changes. In addition, the activity of the MEF2 signaling pathway was drastically altered by the forced changes in the miR-34a-5p or CD117 level in OS cells. Furthermore, si-CD117 suppressed the enhanced colony and sphere formation, which is in agreement with the characteristics of a cancer stem marker. Taken together, our data established CD117 as a direct target of miR-34-5p and demonstrated that this regulation interferes with several CD117-mediated effects on OS cells. In addition to providing new mechanistic insights, our results will provide an approach for diagnosing and chemotherapeutically treating OS

Understanding the Robustness of 3D Object Detection with Bird's-Eye-View Representations in Autonomous Driving

3D object detection is an essential perception task in autonomous driving to understand the environments. The Bird's-Eye-View (BEV) representations have significantly improved the performance of 3D detectors with camera inputs on popular benchmarks. However, there still lacks a systematic understanding of the robustness of these vision-dependent BEV models, which is closely related to the safety of autonomous driving systems. In this paper, we evaluate the natural and adversarial robustness of various representative models under extensive settings, to fully understand their behaviors influenced by explicit BEV features compared with those without BEV. In addition to the classic settings, we propose a 3D consistent patch attack by applying adversarial patches in the 3D space to guarantee the spatiotemporal consistency, which is more realistic for the scenario of autonomous driving. With substantial experiments, we draw several findings: 1) BEV models tend to be more stable than previous methods under different natural conditions and common corruptions due to the expressive spatial representations; 2) BEV models are more vulnerable to adversarial noises, mainly caused by the redundant BEV features; 3) Camera-LiDAR fusion models have superior performance under different settings with multi-modal inputs, but BEV fusion model is still vulnerable to adversarial noises of both point cloud and image. These findings alert the safety issue in the applications of BEV detectors and could facilitate the development of more robust models.Comment: 8 pages, CVPR202

Additional file 1: Figure S1. of The miR-34a-5p promotes the multi-chemoresistance of osteosarcoma via repression of the AGTR1 gene

The interested miRNA and mRNA genes based on the websites and RNA-seq analysis. A dozen of miRNAs were differentially expressed in the multi-chemoresistant OS cells SJSA-1 and the multi-chemosensitive OS cells G-292 and MG63.2 based on the websites, and the ratio over 2 of SJSA-1/G-292 based on RNA-seq-based miR-omic analysis were showed in descending order, has-miR-34a-5p was one of them (A). Reference to similar methods, the downstream genes of has-miR-34a-5p were also showed, the ratio of G-292/SJSA-1 based on RNA-seq analysis were showed in descending order, AGTR1 is located (B). (TIF 88.5 mb

2015 ヘイセイ 27ネンド カダイ ケンキュウ ダイモク イチラン

The 17030 differentially expressed mRNAs were showed through the RNA-seq analysis between SJSA-1 and G-292 cells, the ratio of G-292/SJSA-1 was also presented, and the target gene AGTR1 also located in. (PDF 11.3 mb

Mapping spin-correlations with hard X-ray free-electron laser

Time-resolved X-ray diffraction from Ga091Mn0 09As was recorded with a hard X-ray free-electron-laser. The influence of spin-orders on phonons was investigated; our result suggests a new method for mapping the spin-correlations in low doped magnetic systems, especially the short-range spin-correlation